Re-evaluation of the Ibe–Lücke growth selection experiment in a Fe–Si single crystal

Abstract Selective growth effects during primary recrystallization have been widely discussed but so far no convincing proof has been provided. In the search for a more fundamental understanding of texture formation during the growth stage of static recrystallization, the historic growth experiment by Ibe and Lucke was re-evaluated by making use of modern electron backscattering diffraction equipment. Moreover, the non-random character of the nucleation texture was considered and the misorientations between the recrystallised grains and the single crystal matrix were examined in the 3D Rodrigues–Frank misorientation space. It was seen that the volume fraction of misorientations around the exact 〈1 1 0〉26.5° misorientation increased by a factor of 10 during growth. This is believed to provide unambiguous evidence for the occurrence of selective growth during the recrystallization process under consideration.