Epitaxy and bonding of Cu films on oxygen-terminated α-Al2O3(0001) surfaces

Abstract Transmission electron microscopy studies of oxygen-terminated Cu(1 1 1)/α-Al2O3(0 0 0 1) interfaces possessing two different orientation relationships are reported. The oxygen-terminated α-Al2O3(0 0 0 1) surfaces were generated by utilizing an oxygen plasma at different temperatures in ultrahigh vacuum, and then Cu thin films were grown by molecular beam epitaxy on these surfaces. A clean hydroxylated α-Al2O3(0 0 0 1) surface could be obtained by room temperature oxygen plasma cleaning. On this surface Cu films grew following the conventional face-centered cubic/hexagonal close-packed orientation relationship at room temperature, i.e., ( 1 1 1 ) Cu ∥ ( 0 0 0 1 ) α and ± [ 1 ¯ 1 0 ] Cu ∥ [ 1 0 1 ¯ 0 ] α , and were nearly incoherent to the substrate lattice. The high-temperature (∼750 °C) oxygen plasma treatment after a dehydroxylation process of α-Al2O3(0 0 0 1) generated an oxygen-rich surface. On this surface, the Cu films showed a thermally activated wetting by forming Cu2O-like bonding at the interface in an orientation relationship rotated by 30° from the conventional orientation relationship around the interface normal: ( 1 1 1 ) Cu ∥ ( 0 0 0 1 ) α and ± [ 2 1 ¯ 1 ¯ ] Cu ∥ [ 1 0 1 ¯ 0 ] α .