journal article·2025-09

Defect Formation and Electrical Transformation in SiO2 Thin Films via Ti-Induced Interdiffusion

Soon Joo Yoon, Jeong Woo Jeon, Junho Lee, Jin Tae Park, Chanwoo Lee, Ki Jun Yu, Hagyoul Bae, Kihyun Kim, Keun Heo, Cheol Seong Hwang, Deok-Yong Cho, Taehun Lee, Yoon Kyeung Lee

Acta Materialia· Volume 296
Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Semiconductor materials and devices · Semiconductor materials and interfaces · Ion-surface interactions and analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (49)

Show source-provided references
1. Review on Non-Volatile Memory with High-k Dielectrics: Flash for Generation Beyond 32 nm10.3390/ma7075117 ↗
2. Atomic bonding and electrical potential at metal/oxide interfaces, a first principle study10.1063/1.4979041 ↗
3. First principles study of band line up at defective metal-oxide interface: oxygen point defects at Al/SiO 2 interface10.1088/0022-3727/49/9/095304 ↗
4. Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devices10.1063/1.4986147 ↗
5. Improved resistive switching characteristics of solution processed ZrO 2 /SnO 2 bilayer RRAM via oxygen vacancy differential10.1088/1361-6641/ad2b07 ↗
6. Oxygen vacancy engineering of TaO x -based resistive memories by Zr doping for improved variability and synaptic behavior10.1088/1361-6528/ac0e67 ↗
7. Charge Transition of Oxygen Vacancies during Resistive Switching in Oxide-Based RRAM10.1021/acsami.8b18386 ↗
8. High-Performance Programmable Metallization Cell Memory With the Pyramid-Structured Electrode10.1109/LED.2013.2275851 ↗
9. Unraveling diffusion behavior in Cu-to-Cu direct bonding with metal passivation layers10.1038/s41598-024-57379-2 ↗
10. Chemical vapor deposition TiN process for contact/via barrier applications
11. Behavior of TiN and Ti Barrier Metals in Al-Barrier-Al Via Hole Metallization10.1149/1.2054840 ↗
12. TiCl[sub 4] as a Precursor in the TiN Deposition by ALD and PEALD10.1149/1.1938108 ↗
13. Characteristics of TiN thin films grown by ALD using TiCl4 and NH310.1007/BF03179261 ↗
14. Interaction Between Ti and SiO210.1149/1.2115445 ↗
15. Influence of Isothermal Annealing on Microstructure, Morphology and Oxidation Behavior of AlTiSiN/TiSiN Nanocomposite Coatings10.3390/nano13030474 ↗
16. Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO 2 Interface10.1021/acsami.9b10705 ↗
17. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
18. Generalized Gradient Approximation Made Simple10.1103/PhysRevLett.77.3865 ↗
19. Crystal Structure and Pair Potentials: A Molecular-Dynamics Study10.1103/PhysRevLett.45.1196 ↗
20. Structural, Dymanical, and Electronic Properties of Amorphous Silicon: An ab initio Molecular-Dynamics Study10.1103/PhysRevLett.60.204 ↗
21. Glass transition temperatures of binary oxides from ab initio simulations10.1063/5.0156863 ↗
22. Cooling-rate effects in amorphous silica: A computer-simulation study10.1103/PhysRevB.54.15808 ↗
23. The atomic simulation environment—a Python library for working with atoms10.1088/1361-648X/aa680e ↗
24. First principles study of oxygen vacancy defects in amorphous SiO210.1063/1.4975147 ↗
25. Advances and Challenges of SCANand r 2 SCAN Density Functionals in Transition-Metal Compounds10.1002/wcms.70007 ↗
26. Approaching the limits of dielectric breakdown for SiO2 films deposited by plasma-enhanced atomic layer deposition10.1016/j.actamat.2013.09.003 ↗
27. Mechanism of electrical breakdown in SiO2 films10.1063/1.321721 ↗
28. Dielectric breakdown mechanisms in gate oxides10.1063/1.2147714 ↗
29. N. Klein, Breakdown mechanisms of thermally grown silicon dioxide at high electric fields, in: Conf. Rec. 1988 IEEE Int. Symp. Electr. Insul., IEEE, n.d.: p. 167. https://doi.org/10.1109/ELINSL.1988.13895.10.1109/ELINSL.1988.13895 ↗
30. Structures, preparation and applications of titanium suboxides10.1039/C6RA14507H ↗
31. Atomic structure of conducting nanofilaments in TiO2 resistive switching memory10.1038/nnano.2009.456 ↗
32. Unravelling local environments in mixed TiO2–SiO2 thin films by XPS and ab initio calculations10.1016/j.apsusc.2019.145056 ↗
33. XPS guide: Charge neutralization and binding energy referencing for insulating samples10.1116/6.0000057 ↗
34. Experimental estimation of charge neutrality level of SiO210.1016/j.apsusc.2017.06.078 ↗
35. Optical properties of Si-rich SiO2 films in relation with embedded Si mesoscopic particles10.1016/0022-2313(96)00070-1 ↗
36. Activated chemical bonds in nanoporous and amorphous iridium oxides favor low overpotential for oxygen evolution reaction10.1038/s41467-022-30838-y ↗
37. Ab initio investigations in amorphous silicon dioxide: Proposing a multi-state defect model for electron and hole capture10.1016/j.microrel.2022.114801 ↗
38. SiO 2 in density functional theory and beyond10.1002/pssb.201046283 ↗
39. Nonempirical dielectric-dependent hybrid functional with range separation for semiconductors and insulators
40. Structure, vibrations and electronic transport in silicon suboxides: Application to physical unclonable functions10.1016/j.nocx.2023.100179 ↗
41. Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion10.1016/j.tsf.2011.10.055 ↗
42. Theoretical calculation and experimental study of influence of oxygen vacancy on the electronic structure and hemocompatibility of rutile TiO210.1007/s11431-009-0210-5 ↗
43. Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective10.1080/10408436.2016.1223013 ↗
44. First-principles investigation of positively charged and neutral oxygen vacancies in amorphous silica
45. Measurement of the Band Bending and Surface Dipole at Chemically Functionalized Si(111)/Vacuum Interfaces10.1021/jp401585s ↗
46. Band Bending in Semiconductors: Chemical and Physical Consequences at Surfaces and Interfaces10.1021/cr3000626 ↗
47. Dielectric breakdown of oxide films in electronic devices10.1038/s41578-024-00702-0 ↗
48. Structurally Engineered Stackable and Scalable 3D Titanium-Oxide Switching Devices for High-Density Nanoscale Memory10.1002/adma.201403675 ↗
49. XPS Studies of SiO 2 /Si System under External Bias10.1021/jp022003z ↗