Point defects and interstitial climb of 90° partial dislocations in brown type IIa natural diamond

Multiple electron microscopy techniques have been used to study a brown type IIa natural diamond. Electron backscatter diffraction shows evidence of plastic deformation in the form of slip bands, while cathodoluminescence reveals a network of low-angle grain boundaries, also observed in transmission electron microscopy together with long straight dislocations and dislocation dipoles. Aberration-corrected scanning transmission electron microscopy shows interstitial absorption on the 90° partial of both dissociated dislocations and Z-type faulted vacancy dipoles, forming structures similar to that observed in other fcc materials. The observations indicate an interstitial concentration of 1017 to 1019 cm−3 and calculations of point defect concentrations produced by plastic deformation show that this can be produced by strains of the order of 1%. Brown coloration in diamond has been previously attributed to vacancies and vacancy clusters with concentrations around 1018 cm−3, which suggests that roughly equal numbers of interstitials and vacancies are generated in diamond via plastic deformation. Atomic resolution images of Z-type faulted dipoles allowed a stacking fault energy of 472 ± 38 mJ m−2 to be determined.