Magneto-transport properties in perpendicularly magnetized magnetic tunnel junctions using an Mg40Fe10O50 tunnel barrier
Source abstract
Abstract
We develop perpendicularly magnetized magnetic tunnel junctions (MTJs) consisting of a CoFeB/Mg 40Fe 10O 50 (MgFeO)/CoFeB multilayer. The use of MgFeO yields a substantial improvement in the flatness of the MTJ film stack compared with conventional MTJ films using MgO as a tunnel barrier layer, and a 1.7 times enhancement in the perpendicular magnetic anisotropy energy is obtained for the ultrathin CoFeB layer deposited on the MgFeO layer. Nanostructural analysis combined with elemental distribution mapping reveals the formation of highly (001)-oriented MgFeO in the as-deposited MTJ film, and the crystalline MgFeO layer effectively inhibits diffusion of B atoms from the CoFeB layers through the tunnel barrier layer during the post-annealing process. Accordingly, the MgFeO-MTJ exhibits exceptional stability against high temperature annealing, and a large tunnel magnetoresistance ratio of 235% is demonstrated in MTJ nanopillar devices after annealing at 400 °C. Ferromagnetic resonance measurements also reveal a reduced magnetic damping in the MgFeO-MTJs owing to the improved uniformity in the CoFeB layer. The present experimental results will facilitate the development of magnetoresistive memory devices with increasing memory density and higher energy efficiencies.
Source: expertdata · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Theoretical and Computational Physics
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (46)
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1. Giant tunneling magnetoresistance at room tempereature with MgO (100) tunnel barriers10.1038/nmat1256 ↗
2. Giant room-temperature magnetoresistance in single-crystal Fe/MgO/Fe magnetic tunnel junctions10.1038/nmat1257 ↗
3. 230% room-temperature magnetoresistance in CoFeB/MgO/CoFeB magnetic tunnel junctions10.1063/1.1871344 ↗
4. Theory of tunneling magnetoresistance of an epitaxial Fe/MgO/Fe (001) junction10.1103/PhysRevB.63.220403 ↗
5. Spin-dependent tunneling conductance of Fe—MgO—Fe sandwiches10.1103/PhysRevB.63.054416 ↗
6. Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB/MgO/CoFeB magnetic tunnel junctions10.1063/1.3057974 ↗
7. Development of perpendicularly magnetized Ta—CoFeB—MgO-based tunnel junctions at IBM10.1063/1.4870169 ↗
8. A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction10.1038/nmat2804 ↗
9. Mössbauer spectra of ultrathin Fe films coated by MgO
10. Enhancement of perpendicular magnetic anisotropy in FeB free layers using a thin MgO cap layer10.1063/1.3679393 ↗
11. First-principles investigation of the very large perpendicular magnetic anisotropy at Fe—MgO and Co—MgO interfaces10.1103/PhysRevB.84.054401 ↗
12. Perpendicular magnetic anisotropy at the interface between ultrathin Fe film and MgO studied by angular-dependent X-ray magnetic circular dichroism10.1063/1.4896290 ↗
13. High efficient spin transfer torque writing on perpendicular magnetic tunnel junctions for high density MRAMs10.1016/j.cap.2009.12.021 ↗
14. Spin-transfer torque magnetoresistive random-access memory technologies for normally off computing10.1063/1.4869828 ↗
15. Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications10.1063/1.4870917 ↗
16. Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications10.1103/RevModPhys.89.025008 ↗
17. The emergence of spin electronics in data storage10.1038/nmat2024 ↗
18. Ultrathin Co/Pt amd Co/Pt superlattice films for MgO-based perpendicular magnetic tunnel junctions10.1063/1.3524230 ↗
19. Very strong antiferromagnetic interlayer exchange coupling with iridium spacer layer for perpendicular magnetic tunnel junctions10.1063/1.4977565 ↗
20. Perpendicular-anisotropy CoFeB-MgO magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure10.1063/1.4736727 ↗
21. Ultrathin w space layer-enabled thermal stability enhancement in a perpendicular MgO/CoFeB/W/CoFeB/MgO recording frame10.1038/srep16903 ↗
22. Insertion layer thickness dependence of magnetic and electrical properties for double-CoFeB/MgO-interface magnetic tunnel junctions10.1109/TMAG.2019.2901841 ↗
23. Giant perpendicular magnetic anisotropy in Mo-based double-interface free layer structure for advanced magnetic tunnel junctions10.1002/aelm.202000271 ↗
24. Material for double MgO based perpendicular-magnetic-tunneling-junction10.1038/srep38125 ↗
25. Current-induced magnetization switching in atom- thick tungsten engineered perpendicular magnetic tunnel junctions with large tunnel magnetoresistance10.1038/s41467-018-03140-z ↗
26. Impact of Ta and W-based spacers in double MgO STT-MRAM free layers on perpendicular anisotropy and damping10.1063/1.5000992 ↗
27. Perpendicular magnetic anisotropy and its voltage control in MgO/CoFeB/MgO junctions with atomically thin Ta adhesion layers10.1016/j.actamat.2021.117097 ↗
28. Large voltage-induced magnetic anisotropy change in a few atomic layers of iron10.1038/nnano.2008.406 ↗
29. Induction of coherent magnetization switching in a few atomic layers of FeCo using voltage pulses10.1038/nmat3172 ↗
30. Electric field-induced magnetization reversal in a perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction10.1063/1.4753816 ↗
31. Electric-field-controlled magnetoelectric RAM: progress, challenges, and scaling
32. Developments in voltage-controlled subnanosecond magnetization switching10.1016/j.jmmm.2022.169637 ↗
33. Cryogenic temperature deposition of high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions on ϕ300 mm wafers10.1021/acsaelm.3c00068 ↗
34. Low magnetic damping in an ultrathin CoFeB layer deposited on a 300 mm diameter wafer at cryogenic temperature10.35848/1882-0786/acbae1 ↗
35. Growth of a high-quality ultrathin Fe(001) layer on MgO(001) by insertion of an ultrathin γ-Fe2O3 layer
36. Fabrication of Mg-X-O (X=Fe, Co, Ni, Cr, Mn, Ti, V, and Zn) barriers for magnetic tunnel junctions10.1063/1.5006099 ↗
37. Interfacial Fe segregation and its influence on magnetic properties of CoFeB/MgFeO multilayers10.35848/1882-0786/ad08e3 ↗
38. Development of a high-sensitivity VNA-FMR spectrometer with field modulation detection and its application to magnetic characterization
39. Deposition of in-plane textured MgO on amorphous Si3N4 substrates by ion-beam-assisted deposition and comparisons with ion-beam-assisted deposited yttria-stabilized-zirconia10.1063/1.120227 ↗
40. Characterization of growth and crystallization processes in CoFeB/MgO/CoFeB magnetic tunnel junction structure by reflective high-energy electron diffraction10.1063/1.2140612 ↗
41. Diffraction contrast imaging using virtual apertures10.1016/j.ultramic.2015.03.015 ↗
42. Ultra-low magnetic damping of a metallic ferromagnet10.1038/nphys3770 ↗
43. Radiative damping in waveguide-based ferromagnetic resonance measured via analysis of perpendicular standing spin waves in sputtered permalloy films10.1103/PhysRevB.92.184417 ↗
44. The study on ferromagnetic resonance linewidth for NM/80NiFe/NM (NM=Cu, Ta, Pd and Pt) films10.1143/JJAP.40.580 ↗
45. Enhanced gilbert damping in thin ferromagnetic films
46. Enhanced tunnel magnetoresistance in Fe/Mg4Al-Ox/Fe(001) magnetic tunel junctions10.1063/5.0082715 ↗