Synchrotron X-ray topographic image contrast variation of screw-type basal plane dislocations located at different depths below the crystal surface in 4H-SiC
Source abstract
Abstract
Abstract The contrast features of synchrotron X-ray topographic images of screw-type basal plane dislocations (BPDs) in on-axis 4H-SiC wafers have been studied. Screw BPD images are categorized into two types: one exhibiting a white line bordered by black lines and the other a pure black line contrast. Similar images for off-axis specimens and the corresponding ray-tracing simulations demonstrate that these contrasts can be attributed to the depth of the screw BPDs below the crystal surface. The correlation of the contrast features between simulations and the screw BPD topography images can be used to estimate the depth.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon Carbide Semiconductor Technologies · Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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