Defect recovery processes in Cr-B binary and Cr-Al-B MAB phases: structure-dependent radiation tolerance
Source abstract
Abstract
We have investigated the radiation tolerance of Cr-B binaries and Cr-Al-B ternary MAB phases using a combination of ab initio calculations and experiments. One key discovery is that Cr3AlB4 has excellent resistance to radiation-induced amorphization, and therefore it is a promising material for applications in extreme environments. We also demonstrate that both the type of B network and the presence of Al layer in the structure have important implications for defect kinetics. We find that the order of the tolerance to radiation-induced amorphization is, from high to low, CrB, Cr3AlB4, Cr3B4, Cr4AlB6, and Cr2AlB2 at 150 °C and 0.5 dpa, and Cr3AlB4, CrB, Cr3B4, Cr4AlB6, and Cr2AlB2 at 300 °C and 1.0 dpa. The results are explained in terms of defect properties determined from ab initio calculations.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: MXene and MAX Phase Materials · Advanced ceramic materials synthesis · Boron and Carbon Nanomaterials Research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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