Excellent performance stability of Ba and In double-filled skutterudite thermoelectric materials
Source abstract
Abstract
Abstract The microstructure and thermoelectric properties of Ba and In double-filled Ba0.3In0.2Co3.95Ni0.05Sb12 materials with a figure-of-merit (ZT) of 1.2 at 800 K were carefully investigated by periodic quenching from 723 K to room temperature. The quenching treatment caused enrichment of Ba and loss of Sb and Co on the grain boundaries but had no effect on In and Ni. The enhancement in |α| in the starting period is due to the reduction in σ induced by the secondary precipitates. The reductions in σ, κ and κE are attributed to the secondary precipitates. The increase in κL is assumed to be due to the separation of Ba filler from the Sb-icosahedron voids. A promising ZT value of ∼1.0 remained after quenching 2000 times. It is concluded that the double-filled skutterudite materials have excellent performance stability under periodically fluctuating environmental temperature.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Radiation and Cooling Technologies · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (40)
Show source-provided references
1. Bell · Science · 2008 · 321 · 145710.1126/science.1158899 ↗
2. Snyder · Nat Mater · 2008 · 8 · 10510.1038/nmat2090 ↗
3. Nolas · Annu Rev Mater Sci · 1999 · 29 · 8910.1146/annurev.matsci.29.1.89 ↗
4. Uher · 2001 · vol. 69 · 139
5. Sales · 2003 · vol. 33 · 1
6. Sales · Science · 1996 · 272 · 132510.1126/science.272.5266.1325 ↗
7. Nolas · Phys Rev B · 1998 · 58 · 16410.1103/PhysRevB.58.164 ↗
8. Morelli · Phys Rev B · 1997 · 56 · 737610.1103/PhysRevB.56.7376 ↗
9. Chen · Phys Rev B · 1997 · 55 · 147610.1103/PhysRevB.55.1476 ↗
10. Meisner · Phys Rev Lett · 1998 · 80 · 355110.1103/PhysRevLett.80.3551 ↗
11. Nolas · Appl Phys Lett · 2000 · 77 · 185510.1063/1.1311597 ↗
12. Dilley · J Appl Phys · 2000 · 88 · 194810.1063/1.1305837 ↗
13. Lamberton · Appl Phys Lett · 2002 · 80 · 59810.1063/1.1433911 ↗
14. Yang · Phys Rev B · 2003 · 67 · 16520710.1103/PhysRevB.67.165207 ↗
15. Zhai · Appl Phys Lett · 2006 · 89 · 05211110.1063/1.2234842 ↗
16. Yang · Appl Phys Lett · 2007 · 90 · 10250310.1063/1.2454493 ↗
17. Sun · Phys Rev B · 2007 · 75 · 05411410.1103/PhysRevB.75.054114 ↗
18. Chen · J Appl Phys · 2001 · 90 · 186410.1063/1.1388162 ↗
19. Dyck · J Appl Phys · 2002 · 91 · 369810.1063/1.1450036 ↗
20. Puyet · J Appl Phys · 2005 · 97 · 08371210.1063/1.1868083 ↗
21. Zhao · J Appl Phys · 2006 · 99 · 05371110.1063/1.2172705 ↗
22. Tang · J Appl Phys · 2005 · 97 · 09371210.1063/1.1888048 ↗
23. Nolas · Appl Phys Lett · 2000 · 77 · 5210.1063/1.126874 ↗
24. Sales · Phys Rev B · 2000 · 61 · 247510.1103/PhysRevB.61.2475 ↗
25. Nolas · J Appl Phys · 2003 · 94 · 744010.1063/1.1628377 ↗
26. He · Chem Mater · 2006 · 18 · 75910.1021/cm052055b ↗
27. Zhang · Appl Phys Lett · 2006 · 89 · 11210510.1063/1.2348760 ↗
28. Pei · Appl Phys Lett · 2006 · 89 · 22110710.1063/1.2397538 ↗
29. Lu · J Appl Phys · 2005 · 98 · 10610710.1063/1.2135887 ↗
30. Tang · J Appl Phys · 2006 · 100 · 12370210.1063/1.2375017 ↗
31. Yang · Appl Phys Lett · 2007 · 90 · 19211110.1063/1.2737422 ↗
32. Shi · Appl Phys Lett · 2008 · 92 · 18210110.1063/1.2920210 ↗
33. Peng · J Appl Phys · 2008 · 104 · 05371010.1063/1.2975184 ↗
34. Peng · J Electron Mater · 2009 · 38 · 98110.1007/s11664-008-0624-z ↗
35. Zhao · J Appl Phys · 2007 · 102 · 11370810.1063/1.2821364 ↗
36. Zhao · J Am Chem Soc · 2009 · 131 · 371310.1021/ja8089334 ↗
37. Zhang · Mater Sci Forum · 2005 · 135 · 492
38. Tritt · MRS Bull · 2008 · 33 · 36610.1557/mrs2008.73 ↗
39. Kraemer · Appl Phys Lett · 2008 · 92 · 24350310.1063/1.2947591 ↗
40. Heremans · Phys Rev B · 2004 · 70 · 11533410.1103/PhysRevB.70.115334 ↗