Structure and chemistry of aluminum predose layers in AlN epitaxy on (111) silicon
Source abstract
Abstract
Abstract In this study, (111) silicon substrates were exposed to varied trimethylaluminum predoses and ammonia using metalorganic chemical vapor deposition and the resulting deposits were examined using AFM, SEM, TEM, STEM, EDXS, and XPS. Growth patches were observed with facets in the both the vertical and lateral directions. The width of these patches increased with increasing total volume of deposited aluminum. Their structure was found to be diamond cubic silicon with dilute concentrations of aluminum. Small, rounded AlN islands were observed on the surface of these patches which had electron diffraction patterns consistent with both strained wurtzite and zinc blende structures. A model is proposed in which silicon diffuses into liquid aluminum prior to ammonia exposure and the resulting liquid Al-Si alloy is converted into AlN and silicon upon nitridation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Semiconductor materials and devices · GaN-based semiconductor devices and materials · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (25)
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