Large influence of vacancies on the elastic constants of cubic epitaxial tantalum nitride layers grown by reactive magnetron sputtering

Abstract We report a comprehensive study on the structure and elastic constants of epitaxial cubic δ-TaxN (x ≈ 1) layers deposited by reactive magnetron sputtering at 570 °C on MgO(001), MgO(110) and MgO(111) substrates. X-ray diffraction shows that all layers are single-phase and have a single-crystal rocksalt-structure, growing with an epitaxial cube-on-cube relationship with respect to their MgO substrates. For (001)-orientation, Brillouin light scattering provides the measurement of c44 (137 ± 3 GPa) and c12 (130 ± 5 GPa) single-crystal elastic constants, while picosecond laser ultrasonics (PLU) provides the third independent one, c11 (530 ± 10 GPa). For (110)- and (111)-orientations, PLU provides selectively the following combinations, (c11+c12+2c44)/2 and (c11+2c12+4c44)/3, respectively. Electrical resistivity measurements show evidence of point defects in the films despite a composition close to 1:1 stoichiometry. Point defects (metal and nitrogen vacancies) are considered in our first-principles calculations to find closer agreement between experimental and theoretical lattice parameter, mass density, sound velocities and elastic constants. Sound velocities and elastic constants are found to be particularly sensitive to the presence of vacancies, resulting into a more compliant and less anisotropic material. While only ∼ − 1% mismatch is found between predicted defect-free and experimental lattice parameters, huge differences of −27% and +180% are observed for c11 and c44, respectively. These discrepancies can be rationalized by considering the presence of point defects (metal vacancy and/or Schottky defect) in concentration ∼11% in the as-deposited TaN films, a compositional value that corresponds to the lowest formation energy of δ-TaNx structure.