Application of the Raman technique to measure stress states in individual Si particles in a cast Al–Si alloy

Abstract While Raman spectroscopy is often used to measure stresses, the analyses are almost always limited to cases with simple stress states (uniaxial, equibiaxial). Recently we provided an experimental methodology to determine the full state of stress in Si wafers. Here we extend that methodology to interrogate stress states in Si particles embedded in an Al–Si alloy. Such determinations will ultimately be valuable for predicting ductility of cast Al, since a primary source of damage is cracking of eutectic Si particles. We combine electron back-scattered diffraction with the frequency shift, polarization and intensity of the Raman light to determine stress states. Stress states are measured both in the as-received residually stressed state and under in situ uniaxial loading. Comparison with finite element calculations shows good agreement. As an application of the technique, we show the determination of strength of an individual Si particle and compare the stress evolution with various models.