Stress-dependent prediction of metastable phase formation for magnetron-sputtered V1−xAlxN and Ti1−xAlxN thin films

Abstract Metastable transition metal aluminum nitride (TMAlN, TM = Ti, V) thin films are today deposited utilizing ionized vapor phase condensation techniques where variations in ion flux and ion energy cause compressive film stress, in turn affecting Al solubility. While the metastable phase formation of TiAlN has been modeled, the influence of film stresses on phase formation has so far been overlooked. Using combinatorial deposition via magnetron sputtering, thermodynamic modeling and density functional theory calculations, we investigated the phase formation of V1−xAlxN and Ti1−xAlxN thin films at various substrate temperatures and deposition rates. Ab initio calculations indicate that the maximum solid solubility of Al in face-centered cubic (fcc) V1−xAlxN or fcc-Ti1−xAlxN shows a linear trend as a function of the magnitude of compressive stress. Here, we consider the influence of film stresses on the metastable phase formation of fcc-V1−xAlxN and fcc-Ti1−xAlxN for the first time. Specifically, experimental data from a single combinatorial deposition is utilized to predict the stress-dependent formation of metastable phases based on thermodynamic and ab initio data. Explicit consideration of stress extends the Al solubility limit to higher values for both Ti1-xAlxN and V1-xAlxN thin films, previously unobtainable by energetics, but accessible experimentally. These predictions are experimentally verified and thus provide guidance for experimental efforts with the goal of increasing the Al concentration in fcc-TMAlN thin films.