journal article·2020-10Open access

Coupled effects of electronic and nuclear energy deposition on damage accumulation in ion-irradiated SiC

Lauren Nuckols, Miguel L. Crespillo, Chen Xu, Eva Zarkadoula, Yanwen Zhang, William J. Weber

Acta Materialia· Volume 199

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OpenAlex topics: Ion-surface interactions and analysis · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices

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References (60)

Show source-provided references
1. Causes of climate change over the past 1000 years10.1126/science.289.5477.270 ↗
2. The path towards sustainable energy10.1038/nmat4834 ↗
3. Structural materials for fission & fusion energy10.1016/S1369-7021(09)70294-9 ↗
4. Materials challenges in nuclear energy10.1016/j.actamat.2012.11.004 ↗
5. Ionization-induced annealing of pre-existing defects in silicon carbide
6. Fundamentals of Radiation Materials Science
7. Transient thermal processes in heavy ion irradiation of crystalline inorganic insulators10.1016/S0168-583X(99)00799-5 ↗
8. Coupled electronic and atomic effects on defect evolution in silicon carbide under ion irradiation10.1016/j.cossms.2017.09.003 ↗
9. The role of electronic energy loss in ion beam modification of materials10.1016/j.cossms.2014.09.003 ↗
10. Irradiation effects induced in silicon carbide by low and high energy ions10.1016/j.nimb.2008.03.113 ↗
11. In-cascade ionization effects on defect production in 3C silicon carbide10.1080/21663831.2017.1334241 ↗
12. Structure and properties of ion-beam-modified (6H) silicon carbide10.1016/S0921-5093(98)00710-2 ↗
13. Ionizing vs collisional radiation damage in materials: separated, competing, and synergistic effects in Ti3SiC210.1016/j.actamat.2019.05.015 ↗
14. Two regimes of ionization-induced recovery in SrTiO3 under irradiation10.1016/j.scriptamat.2019.08.013 ↗
15. Ionization-induced thermally activated defect-annealing process in SiC
16. On the conflicting roles of ionizing radiation in ceramics10.1016/S0168-583X(02)00648-1 ↗
17. Handbook of SiC properties for fuel performance modeling10.1016/j.jnucmat.2007.05.016 ↗
18. Neutron displacement damage cross sections for SiC10.1016/0022-3115(93)90143-M ↗
19. Physical properties of SiC10.1557/S0883769400032723 ↗
20. A tough, thermally conductive silicon carbide composite with high strength up to 1600°C in air10.1126/science.282.5392.1295 ↗
21. Young’s Modulus of Various Refractory Materials as a Function of Temperature10.1111/j.1151-2916.1959.tb15462.x ↗
22. Mechanical Properties of Polycrystalline β-SiC10.1111/j.1151-2916.1969.tb15845.x ↗
23. SiC Schottky diodes for harsh environment space applications10.1109/TIE.2010.2080252 ↗
24. (Invited) High power SiC power processing unit development10.1149/06911.0013ecst ↗
25. Piezoresistive characteristics of silicon carbide for integrated sensor applications
26. Combined effects of nuclear and electronic energy losses in solids irradiated with a dual-ion beam10.1063/1.4801518 ↗
27. Influence of chemical disorder on energy dissipation and defect evolution in concentrated solid solution alloys10.1038/ncomms9736 ↗
28. Ion beam analysis of irradiation effects in 6H-SiC10.1016/S0168-583X(03)00527-5 ↗
29. Athermal crystallization induced by electronic excitations in ion-irradiated silicon carbide10.1063/1.2405410 ↗
30. Mechanism of the swift heavy ion induced epitaxial recrystallization in predamaged silicon carbide10.1063/1.3236627 ↗
31. Molecular dynamics simulations of swift heavy ion induced defect recovery in SiC10.1016/j.commatsci.2012.09.010 ↗
32. Swift heavy ion induced recrystallization in cubic silicon carbide: New insights from designed experiments and MD simulations10.1016/j.nimb.2013.10.080 ↗
33. Combined experimental and computational study of the recrystallization process induced by electronic interactions of swift heavy ions with silicon carbide crystals10.1103/PhysRevB.86.100102 ↗
34. SRIM - The stopping and range of ions in matter (2010)10.1016/j.nimb.2010.02.091 ↗
35. Ziegler · 2008
36. Predicting damage production in monoatomic and multi-elemental targets using stopping and range of ions in matter code: challenges and recommendations10.1016/j.cossms.2019.06.001 ↗
37. Atomic scale simulation of defect production in irradiated 3C-SiC10.1063/1.1389523 ↗
38. Pysrim : automation, analysis, and plotting of SRIM calculations10.21105/joss.00829 ↗
39. New ion beam materials laboratory for materials modification and irradiation effects research10.1016/j.nimb.2014.07.028 ↗
40. Electron loss and capture cross sections of 800 keV amu-1 H and He species in carbon foils
41. Temperature measurements during high flux ion beam irradiations10.1063/1.4941720 ↗
42. Effects of implantation temperature on damage accumulation in Al-implanted 4H-SiC10.1063/1.1666974 ↗
43. Temperature dependence of disorder accumulation and amorphization in Au-ion-irradiated 6H-SiC10.1103/PhysRevB.70.165208 ↗
44. In-situ luminescence monitoring of ion-induced damage evolution in SiO2 and Al2O310.1016/j.jlumin.2015.12.016 ↗
45. Bird · 1989
46. Response of strontium titanate to ion and electron irradiation10.1016/j.jnucmat.2009.02.014 ↗
47. Ion-beam induced damage and annealing behaviour in SiC10.1016/S0168-583X(98)00083-4 ↗
48. Effects of implantation temperature and ion flux on damage accumulation in Al-implanted 4H-SiC10.1063/1.1537451 ↗
49. The efficiency of damage production in silicon carbide10.1016/j.nimb.2003.12.006 ↗
50. Ion–solid interactions and defects in silicon carbide10.1016/S0168-583X(01)01193-4 ↗
51. Dynamic annealing in ion implanted SiC: Flux versus temperature dependence10.1063/1.1622797 ↗
52. Revealing ionization-induced dynamic recovery in ion-irradiated SrTiO310.1016/j.actamat.2018.02.038 ↗
53. Ion-beam-irradiation induced defects in gallium nitride10.1016/S0168-583X(03)00929-7 ↗
54. Damage processes in MgO irradiated with medium-energy heavy ions10.1016/j.actamat.2015.01.011 ↗
55. Channeling study of lattice disorder and gold implants in gallium nitride10.1016/S0168-583X(02)00601-8 ↗
56. Analysis of displacement cascades and threshold displacement energies in β-SiC10.1016/S0022-3115(99)00183-X ↗
57. Optical spectroscopy study of damage induced in 4H-SiC by swift heavy ion irradiation
58. 1.2 MeV/amu Xe ion induced damage recovery in SiC10.1016/j.nimb.2013.09.034 ↗
59. Effects of electronic and nuclear interactions in SiC10.1016/j.nimb.2009.02.033 ↗
60. Multiscale characterization of irradiation behaviour of ion-irradiated SiC/SiC composites10.1016/j.actamat.2018.09.012 ↗