Thermal Characterisation of Porous Silicon Membranes
Source abstract
Abstract
Results of thermal characterisation based on the phase lag of photoacoustic signal for front-rear surface illumination of porous silicon and nitrided porous silicon membranes for gas sensing devices are presented. Thermal conductivity values in good agreement with literature values have been obtained, confirming the usefulness and reliability of photothermal methods in the investigation of new materials for sensors and microsystems. Preliminary results of stokes-antistokes Raman investigations are also reported.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thermography and Photoacoustic Techniques · Photoacoustic and Ultrasonic Imaging · Gas Sensing Nanomaterials and Sensors
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (11)
Show source-provided references
1. M.N. Wybourne, Properties of Silicon, emis datareviews No. 4, 37, INSPEC (1988).
2. W. Lang, Mat. Science & Eng. R R17(1) (1996).
3. G. Gösele, J. Linsmeier, V. Drach, J. Fricke, and R. Arens-Fischer, J. Phys. D: Appl. Phys. 30, 2911–2916 (1997).10.1088/0022-3727/30/21/001 ↗
4. G. Benedetto, L. Boarino, N. Brunetto, A. Rossi, R. Spagnolo, and G. Amato, Phil. Mag. B 76(3), 383–393 (1997).10.1080/01418639708241101 ↗
5. W. Lang and P. Steiner, Sens. Mater. 8, 327–344 (1996).
6. J.J. Yon, K. Barla, R. Herino, and G. Bomchil, J.Appl. Phys., 62(3), 1042–1047 (1987).10.1063/1.339761 ↗
7. O. Pessoa Jr, C.L. Cesar, N.A. Patel, and H. Vargas, C.C. Ghizoni, L.C.M. Miranda, J. Appl. Phys. 59, 1316–1318 (1986).10.1063/1.336524 ↗
8. A. Rosencwaig and A. Gersho, J. Appl. Phys. 47(64) (1976).10.1063/1.322296 ↗
9. B. Bonno, J.L. Laporte, and Y. Rousset, J. Appl. Phys. 67, 2253–2256 (1990).10.1063/1.346094 ↗
10. P. Maccagnani, R. Angelucci, P. Pozzi, L. Dori, A. Parisini, M. Bianconi, G. Benedetto, and A. Rossi, Sensors and Materials 11(3), 131–147 (1999).
11. G.D. Pazionis, Hua Tang, and I.P. Herman, IEEE Journal of Quantum Electronics 25(5), 976–988 (1989).10.1109/3.27988 ↗