Two-step ALD process for non-oxide ceramic deposition: the example of boron nitride

Abstract Atomic layer deposition (ALD) based on polymer-derived ceramics (PDCs) chemistry is used for the fabrication of boron nitride thin films from reaction between trichloroborazine and hexamethyldisilazane. The transposition of the PDCs route to ALD is highly appealing for depositing ceramics, especially non-oxide ones, as it offers various molecular precursors. From a two-step approach composed of an ALD process forming a so-called preceramic film and its subsequent ceramization, conformal and homogenous BN layers are successfully synthesized on various inorganic substrates. In the first stage, smooth polyborazine coatings are obtained at a temperature as low as 90 °C. The saturation and self-limitation of the ALD gas-surface reactions are verified. Intriguingly, three ALD windows seem to exist and are attributed to change in ligand exchange. After the ceramization stage using a heat treatment, conformal near-stoichiometric BN layers are obtained. Their structure in terms of crystallinity can be adjusted from amorphous to well-crystalline sp² phase by controlling the treatment temperature. In particular, a crystallization onset occurs at 1000 °C and well defined sp² crystalline planes oriented parallel to the surface are noted after ceramization at 1350 °C. Finally, side-modification of the substrate surface induced by the thermal treatment appears to impact on the final BN topography and defect generation.