Metal−Dielectric Interface Toughening by Catalyzed Ring Opening in a Monolayer

We demonstrate a novel strategy for toughening metal−dielectric interfaces by catalyzed fissure of low-polarizability moieties in an organosilane monolayer. Photoelectron spectroscopy and ab initio calculations show that seven-fold toughening of Cu−silica interfaces is due to Cu-catalyzed disilacyclobutane ring opening and bonding. Our findings open up possibilities for directly integrating metals with molecularly derived low permittivity dielectrics for applications without using an intermediary glue layer, for example, by incorporating strained moieties into polymer precursors.