journal article·2023-11

Achieving n-type Conduction in AMg2Sb2 (A = Yb, Eu, Ca, Sr, Ba) Zintl Phases

Xin Zheng, Airan Li, Shuo Liu, Zhongkang Han, Min Zhang, Feng Liu, Chenguang Fu, Tiejun Zhu

Acta Materialia· Volume 260
Publisher page

Abstract

Zintl phases have been theoretically predicted to be promising n-type thermoelectric materials, which, however, are very difficult to achieve experimentally, owing to the existence of intrinsic negatively charged defects. Here, taking the representative AMg 2Sb 2 ( A= Yb, Eu, Ca, Sr, Ba) as the examples, we theoretically found that the defect formation energy of negatively charged A and Mg vacancies near the conduction band minimum are lower than other types of defects, playing as the vital role in hindering the experimental realization of n-type conduction. Experimentally, by suppressing the formation of A and Mg vacancies, n-type conduction can be successfully achieved in all the studied AMg 2Sb 2 Zintl phases. Moreover, taking EuMg 2Sb 2 as an example, its n-type thermoelectric performance can be significantly improved through further isoelectronic alloying and donor doping. This work highlights the importance of understanding intrinsic defects as a guide for the development of n-type thermoelectric Zintl phases.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal properties of materials · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (58)

Show source-provided references
1. Goldsmid · 2009
2. Uher · 2017
3. Complex thermoelectric materials10.1038/nmat2090 ↗
4. Defect engineering in thermoelectric materials: what have we learned?10.1039/D1CS00347J ↗
5. Defect-Controlled Electronic Properties in AZn2Sb2 Zintl Phases10.1002/anie.201311125 ↗
6. Evolution of the intrinsic point defects in Bismuth Telluride-based thermoelectric materials10.1021/acsami.9b15198 ↗
7. Band engineering in Mg3Sb2 by alloying with Mg3Bi2 for enhanced thermoelectric performance10.1039/C7MH00865A ↗
8. Band engineering of thermoelectric materials10.1002/adma.201202919 ↗
9. Point defect engineering of high-performance Bismuth-Telluride-based thermoelectric materials10.1002/adfm.201400474 ↗
10. Vacancy-induced dislocations within grains for high-performance PbSe thermoelectrics10.1038/ncomms13828 ↗
11. Recent studies of Bismuth Telluride and its alloys10.1063/1.1777042 ↗
12. The importance of phase equilibrium for doping efficiency: Iodine doped PbTe10.1039/C9MH00294D ↗
13. Revealing the intrinsic electronic structure of 3D Half-Heusler thermoelectric materials by angle-resolved photoemission spectroscopy10.1002/advs.201902409 ↗
14. Vacancy manipulation for thermoelectric enhancements in GeTe alloys10.1021/jacs.8b09375 ↗
15. Realizing n-type GeTe through suppressing the formation of cation vacancies and Bi-doping10.1088/0256-307X/38/12/127201 ↗
16. Practical doping principles10.1063/1.1584074 ↗
17. Doping by design: finding new n-type dopable ABX4 Zintl phases for thermoelectrics10.1039/D0TA08238D ↗
18. Point-defect energies in the nitrides of aluminum, gallium, and indium10.1103/PhysRevB.45.10942 ↗
19. Towards the identification of the dominant donor in GaN10.1103/PhysRevLett.75.296 ↗
20. Ab initio calculations of intrinsic point defects in ZnSb10.1021/cm300642t ↗
21. Thermoelectric performance and defect chemistry in n-type Zintl KGaSb410.1021/acs.chemmater.7b01217 ↗
22. Recent progress and future challenges on thermoelectric Zintl materials10.1016/j.mtphys.2017.06.003 ↗
23. Zintl phases for thermoelectric devices10.1039/b702266b ↗
24. On the dopability of semiconductors and governing material properties10.1021/acs.chemmater.9b05126 ↗
25. Isotropic conduction network and defect chemistry in Mg3+δSb2-based layered Zintl compounds with high thermoelectric performance10.1002/adma.201603955 ↗
26. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands10.1038/ncomms13901 ↗
27. Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties10.1039/C7EE00098G ↗
28. Extraordinary n-type Mg3SbBi thermoelectrics enabled by Yttrium doping
29. High-performance n-type Mg3Sb2 towards thermoelectric application near room temperature10.1002/adfm.201906143 ↗
30. Mg3+δSbxBi2−x Family: A promising substitute for the state-of-the-art n-type thermoelectric materials near room temperature10.5772/intechopen.76823 ↗
31. High thermoelectric cooling performance of n-type Mg3Bi2-based materials10.1126/science.aax7792 ↗
32. Exceptional thermoelectric performance in Mg3Sb0.6Bi1.4 for low-grade waste heat recovery10.1039/C8EE03374A ↗
33. Metallic n-type Mg3Sb2 single crystals demonstrate the absence of ionized impurity scattering and enhanced thermoelectric performance10.1002/adma.201908218 ↗
34. Enhanced thermoelectric performance of p-type Mg3Sb2 by Lithium doping and its tunability in an anionic framework10.1007/s10853-018-2555-2 ↗
35. High-performance Mg3Sb2-xBix thermoelectrics: progress and perspective10.34133/2020/1934848 ↗
36. Phase boundary mapping to obtain n-type Mg3Sb2-based thermoelectrics10.1016/j.joule.2017.11.005 ↗
37. The crystal structure of α-Mg3Sb210.1107/S0567740874006285 ↗
38. Chemical bonding origin of the unexpected isotropic physical properties in thermoelectric Mg3Sb2 and related materials10.1038/s41467-018-06980-x ↗
39. Insights into the design of thermoelectric Mg3Sb2 and its analogs by combining theory and experiment10.1038/s41524-019-0215-y ↗
40. Zintl chemistry for designing high efficiency thermoelectric materials10.1021/cm901956r ↗
41. Site preferences and bond length differences in CaAl2Si2-type Zintl compounds10.1021/ja00268a027 ↗
42. Complementary local and extended views of bonding in the ThCr2Si2 and CaAl2Si2 structures10.1016/0022-4596(88)90009-6 ↗
43. Roles of cations, electronegativity difference, and anionic interlayer interactions in the metallic versus nonmetallic character of Zintl phases related to arsenic10.1002/jcc.20989 ↗
44. Achieving n-type conduction in YbMg2Sb2-based compounds through defect engineering and doping10.1016/j.actamat.2021.117467 ↗
45. Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set10.1103/PhysRevB.54.11169 ↗
46. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/PhysRevB.59.1758 ↗
47. VASPKIT: a user-friendly interface facilitating high-throughput computing and analysis using VASP code10.1016/j.cpc.2021.108033 ↗
48. Generalized gradient approximation made simple10.1103/PhysRevLett.77.3865 ↗
49. LOBSTER: a tool to extract chemical bonding from plane-wave based DFT10.1002/jcc.24300 ↗
50. Accurate prediction of defect properties in density functional supercell calculations10.1088/0965-0393/17/8/084002 ↗
51. Accurate gap levels and their role in the reliability of other calculated defect properties10.1002/pssb.201046210 ↗
52. Chemical potential dependence of defect formation energies in GaAs: application to Ga self-diffusion10.1103/PhysRevLett.67.2339 ↗
53. Designing high-performance layered thermoelectric materials through orbital engineering10.1038/ncomms10892 ↗
54. High-performance pseudocubic thermoelectric materials from non-cubic chalcopyrite compounds10.1002/adma.201400058 ↗
55. Thermoelectric properties of AMg2X2, AZn2Sb2 (A=Ca, Sr, Ba; X=Sb, Bi), and Ba2ZnX2 (X=Sb, Bi) Zintl compounds10.1039/C6TA11234J ↗
56. Commentary: the materials project: a materials genome approach to accelerating materials innovation10.1063/1.4812323 ↗
57. Improvement of low-temperature zT in a Mg3Sb2-Mg3Bi2 solid solution via Mg-vapor annealing10.1002/adma.201902337 ↗
58. The thermoelectric figure of merit and its relation to thermoelectric generators