journal article·2025-04Open access

Grain boundary modulation improved thermal stability of high thermoelectric performance Mg3(Sb,Bi)2-based compounds

Ziming Zhang, Chen Ming, Qingfeng Song, Lei Wang, Hanbing Chen, Jincheng Liao, Chao Wang, Lidong Chen, Shengqiang Bai

Acta Materialia· Volume 287

Abstract

Mg 3 (Sb,Bi) 2 -based Zintl compounds are rising stars with superior features of high thermoelectric (TE) performance, nontoxicity and low cost. However, the poor thermodynamic stability hinders its practical application. Here, we propose a design strategy of modulating the local chemical composition with grain boundary (GB) phase guided by computational phase equilibrium diagrams. By in-situ constructing ZrSb 1- x second phase in the GB regions of Mg 3 (Sb,Bi) 2 -based compounds, the migration of Mg is blocked and the Mg deletion is depressed. Benefit from these, the driving force of Mg diffusion from matrix to GB and Mg migration along GBs is weakened, resulting in an improved thermal stability without degradation of electrical transport properties. The fabricated 8-pair TE module using GB modulated n-type Mg 3.1 Sb 1.5 Bi 0.49 Te 0.01 and p-type Ge 0.89 Cu 0.06 Sb 0.08 Te presents an efficiency of 8.9 % under the temperature difference of 450 K and shows excellent durability in the thermal cycling test. This study provides an effective strategy to improve thermal stability by constructing GB phase, and proves the feasibility of the practical application for Mg 3 Sb 2 -based TE modules.
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Research context

OpenAlex topics: Advanced Thermoelectric Materials and Devices · Thermal Expansion and Ionic Conductivity · Heusler alloys: electronic and magnetic properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (66)

Show source-provided references
1. Skutterudite with graphene-modified grain-boundary complexion enhances enabling high-efficiency thermoelectric device10.1039/C6EE02467J ↗
2. Mg3(Bi,Sb)2-based thermoelectric modules for efficient and reliable waste-heat utilization up to 750 K10.1039/D2EE01038K ↗
3. Towards tellurium-free thermoelectric modules for power generation from low-grade heat10.1038/s41467-021-21391-1 ↗
4. Compromise between band structure and phonon scattering in efficient n-Mg3Sb2-xBix thermoelectrics
5. Convergence of electronic bands for high performance bulk thermoelectrics10.1038/nature09996 ↗
6. Band engineering in Mg3Sb2 by alloying with Mg3Bi2 for enhanced thermoelectric performance10.1039/C7MH00865A ↗
7. Grain boundary dominated charge transport in Mg3Sb2-based compounds10.1039/C7EE03326E ↗
8. Carrier grain boundary scattering in thermoelectric materials10.1039/D1EE03802H ↗
9. Microstructural effects on thermoelectric efficiency: a case study on magnesium silicide10.1016/j.actamat.2014.05.041 ↗
10. Grain boundary scattering of charge transport in n-type (Hf,Zr)CoSb half-Heusler thermoelectric materials10.1002/aenm.201803447 ↗
11. Realization of non-equilibrium process for high thermoelectric performance Sb-doped GeTe10.1016/j.scib.2018.04.012 ↗
12. Manipulation of ionized impurity scattering for achieving high thermoelectric performance in n-type Mg3Sb2-based materials10.1073/pnas.1711725114 ↗
13. Tuning the carrier scattering mechanism to effectively improve the thermoelectric properties10.1039/C7EE00098G ↗
14. Defect engineering for realizing high thermoelectric performance in n-type Mg3Sb2-based materials10.1021/acsenergylett.7b00742 ↗
15. An unlikely route to low lattice thermal conductivity: small atoms in a simple layered structure10.1016/j.joule.2018.06.014 ↗
16. Significant roles of intrinsic point defects in Mg2X (X = Si, Ge, Sn) thermoelectric materials10.1002/aelm.201500284 ↗
17. Isotropic conduction network and defect chemistry in Mg3+δSb2-based layered Zintl compounds with high thermoelectric performance10.1002/adma.201603955 ↗
18. Extraordinary n-type Mg3SbBi thermoelectrics enabled by yttrium doping
19. Realizing an excellent conversion efficiency of 14.5% in the Mg3Sb2/GeTe-based thermoelectric module for waste heat recovery10.1039/D3EE02587J ↗
20. Efficient Sc-doped Mg3.05–xScxSbBi thermoelectrics near room temperature10.1021/acs.chemmater.9b03156 ↗
21. Extraordinary thermoelectric performance in n-type manganese doped Mg3Sb2 Zintl: high band degeneracy, tuned carrier scattering mechanism and hierarchical microstructure10.1016/j.nanoen.2018.07.059 ↗
22. High-performance Mg3Sb2-based thermoelectrics with reduced structural disorder and microstructure evolution10.1038/s41467-024-51120-3 ↗
23. Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values10.1038/s41467-023-43228-9 ↗
24. Bulk nanostructured thermoelectric materials: current research and future prospects10.1039/b822664b ↗
25. Revelation of inherently high mobility enables Mg3Sb2 as a sustainable alternative to n-Bi2Te3 thermoelectrics10.1002/advs.201802286 ↗
26. Phase boundary mapping to obtain n-type Mg3Sb2-based thermoelectrics10.1016/j.joule.2017.11.005 ↗
27. Mg deficiency in grain boundaries of n-type Mg3Sb2 identified by atom probe tomography10.1002/admi.201900429 ↗
28. Maximizing the performance of n-type Mg3Bi2 based materials for room-temperature power generation and thermoelectric cooling10.1038/s41467-022-28798-4 ↗
29. Improvement of low-temperature zT in a Mg3Sb2-Mg3Bi2 solid solution via Mg-vapor annealing10.1002/adma.201902337 ↗
30. High thermoelectric cooling performance of n-type Mg3Bi2-based materials10.1126/science.aax7792 ↗
31. Thermal stability of Mg3Sb1.475Bi0.475Te0.05 high performance n-type thermoelectric investigated through powder X-ray diffraction and pair distribution function analysis10.1039/C8TA06544F ↗
32. N-type Mg3Sb2-xBix with improved thermal stability for thermoelectric power generation10.1016/j.actamat.2020.10.035 ↗
33. Performance degradation and protective effects of atomic layer deposition for Mg-based thermoelectric modules10.1002/adfm.202406473 ↗
34. Insight into the strategies for improving the thermal stability of efficient n-type Mg3Sb2-based thermoelectric materials10.1021/acsami.2c07457 ↗
35. Intrinsic thermal stability enhancement in n-type Mg3Sb2 thermoelectrics toward practical applications10.1016/j.actamat.2023.118752 ↗
36. The importance of the Mg-Mg interaction in Mg3Sb2-Mg3Bi2 shown through cation site alloying10.1039/C9TA11328B ↗
37. Inhibiting Mg diffusion and evaporation by forming Mg-rich reservoir at grain boundaries improves the thermal stability of n-type Mg3Sb2 thermoelectrics
38. Effects of surface chemical potentials on cation segregation10.1039/D0TA08850A ↗
39. Quantification of evaporation parameter and determination of evaporation mechanism10.1016/j.jallcom.2019.152699 ↗
40. Surface segregation modeling in the case of evaporation10.1016/j.jallcom.2019.05.134 ↗
41. A robust thermoelectric module based on MgAgSb/Mg3(Sb,Bi)2 with a conversion efficiency of 8.5% and a maximum cooling of 72 K10.1039/D2EE00883A ↗
42. Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)210.1038/s41467-023-40648-5 ↗
43. High efficiency GeTe-based materials and modules for thermoelectric power generation10.1039/D0EE02791J ↗
44. Power generation from nanostructured PbTe-based thermoelectrics: comprehensive development from materials to modules10.1039/C5EE02979A ↗
45. Realizing high-efficiency power generation in low-cost PbS-based thermoelectric materials10.1039/C9EE03410B ↗
46. Realizing high-performance thermoelectric power generation through grain boundary engineering of skutterudite-based nanocomposites10.1016/j.nanoen.2017.10.003 ↗
47. High-efficiency half-Heusler thermoelectric modules enabled by self-propagating synthesis and topologic structure optimization10.1039/C9EE02228G ↗
48. High-efficiency and stable thermoelectric module based on liquid-like materials10.1016/j.joule.2019.04.010 ↗
49. High thermoelectric performance of p-BiSbTe compounds prepared by ultra-fast thermally induced reaction10.1039/C7EE02677C ↗
50. High efficiency Bi2Te3-based materials and devices for thermoelectric power generation between 100 and 300°C10.1039/C6EE02017H ↗
51. Lead-free and scalable GeTe-based thermoelectric module with an efficiency of 12%10.1126/sciadv.adg7919 ↗
52. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
53. The inorganic crystal structure data base10.1021/ci00038a003 ↗
54. Strongly Constrained and Appropriately Normed Semilocal Density Functional10.1103/PhysRevLett.115.036402 ↗
55. The effect of chemical stresses on diffusion10.1063/1.356174 ↗
56. Realizing a high zT of 1.6 in n-type Mg3Sb2-based Zintl compounds through Mn and Se codoping10.1021/acsami.0c01004 ↗
57. Point defect engineering and machinability in n-type Mg3Sb2-based materials
58. Study of the crystal structures of ZrSb and β-ZrSb2 and of the bonding in the two ZrSb2 structures10.1016/0022-4596(88)90131-4 ↗
59. Planar nets of Ti atoms comprising squares and rhombs in the new binary antimonide Ti2Sb10.1021/ja048262e ↗
60. A synthetic and structural study of the zirconium-antimony system10.1016/0022-4596(88)90130-2 ↗
61. Discovery of high-performance low-cost n-type Mg3Sb2-based thermoelectric materials with multi-valley conduction bands10.1038/ncomms13901 ↗
62. High-performance low-cost n-type Se-doped Mg3Sb2-based Zintl compounds for thermoelectric application10.1021/acs.chemmater.7b01746 ↗
63. Improved stability and high thermoelectric performance through cation site doping in n-type La-doped Mg3Sb1.5Bi0.510.1039/C8TA08975B ↗
64. Demonstration of ultrahigh thermoelectric efficiency of ∼7.3% in Mg3Sb2/MgAgSb module for low-temperature energy harvesting10.1016/j.joule.2021.03.017 ↗
65. Mg3(Bi,Sb)2 single crystals towards high thermoelectric performance10.1039/D0EE00838A ↗
66. Extraordinary thermoelectric performance, thermal stability and mechanical properties of n-type Mg3Sb1.5Bi0.5 through multi-dopants at interstitial site