HCHO Sensing Mechanism of In4Sn3O12 Revealed by DRIFTS and DFT
Source abstract
Abstract
The combination of operando Diffuse Reflectance Infrared Fourier Transform Spectroscopy measurement and Density Functional Theory calculation reveals the counterintuitive HCHO sensing mechanism of In 4 Sn 3 O 12 . It is merely partial oxidation of HCHO into formate (or HCOOH) with medium activation energy (0.43–0.68 eV) and sufficient electron donation effect that is responsible for the sensor signal at the optimum temperature of 200 °C. The Sn (3a)-connected O is the active site and plays key roles in both HCHO adsorption and partial oxidation.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Gas Sensing Nanomaterials and Sensors · Advanced Chemical Sensor Technologies · Spectroscopy and Laser Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Physical and Theoretical Chemistry and Center for Light-Matter Interaction, Sensors & Analytics (LISA+), University of Tübingen, 72076 Tübingen, Germany
LAAS-CNRS, Université de Toulouse, CNRS, 31400 Toulouse, France
Foundation Institute of Materials Science (IWT), Department of Production Engineering, University of Bremen, 28359 Bremen, Germany
State Key Laboratory of Silicate Materials for Architectures, School of Materials Science and Engineering, Wuhan University of Technology, 430070 Wuhan, China
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