Mobility and Decay Dynamics of Charge Carriers in One-Dimensional Selenium van der Waals Solid
Source abstract
Abstract
High Resolution Image Download MS PowerPoint Slide Trigonal selenium is a semiconducting van der Waals solid that consists of helical atomic chains. We studied the mobility and decay dynamics of excess electrons and holes moving along the selenium chains. Excess charge carriers were generated by irradiation of powdered selenium with 3 MeV electron pulses. Their mobility and decay via trapping or recombination was studied by time-resolved microwave conductivity measurements as a function of temperature. The mobility of charge carriers along the Se chains is at least ca. 0.5 cm 2 ·V –1 ·s –1 at room temperature. Charges decay predominantly by trapping at defects. The appreciable mobility, together with the potential for large-scale production of Se wires by liquid exfoliation, makes this material of great interest for use in nanoelectronics.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: 2D Materials and Applications · Graphene research and applications · Topological Materials and Phenomena
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Optoelectronic Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
Funding
Stichting voor Fundamenteel Onderzoek der Materie · Deutsche Forschungsgemeinschaft · Nederlandse Organisatie voor Wetenschappelijk Onderzoek
References (33)
Show source-provided references
1. 10.1088/2053-1583/3/2/02200110.1088/2053-1583/3/2/022001 ↗
2. 10.1088/2053-1583/3/4/04200110.1088/2053-1583/3/4/042001 ↗
3. 10.1021/acsnano.6b0109110.1021/acsnano.6b01091 ↗
4. 10.1126/science.122641910.1126/science.1226419 ↗
5. 10.1126/science.119497510.1126/science.1194975 ↗
6. 10.1002/smll.20150220710.1002/smll.201502207 ↗
7. 10.1002/1616-3028(200203)12:3<219::AID-ADFM219>3.0.CO;2-U10.1002/1616-3028(200203)12:3<219::AID-ADFM219>3.0.CO;2-U ↗
8. 10.1002/adma.20150261710.1002/adma.201502617 ↗
9. 10.1016/S1369-7021(08)70055-510.1016/S1369-7021(08)70055-5 ↗
10. 10.1002/adma.20090417110.1002/adma.200904171 ↗
11. 10.1021/jp022379c10.1021/jp022379c ↗
12. 10.1021/jz201229a10.1021/jz201229a ↗
13. 10.1021/cm049577w10.1021/cm049577w ↗
14. 10.1016/j.physrep.2011.01.00110.1016/j.physrep.2011.01.001 ↗
15. Minaev V. S. · J. Optoelectron. Adv. Mater. · 2005 · 7 · 1717
16. 10.1103/PhysRev.158.62310.1103/PhysRev.158.623 ↗
17. 10.1002/pssb.1966016021410.1002/pssb.19660160214 ↗
18. 10.1016/B978-0-08-013895-4.50004-010.1016/B978-0-08-013895-4.50004-0 ↗
19. 10.1103/PhysRevLett.18.54010.1103/PhysRevLett.18.540 ↗
20. 10.1063/1.165682210.1063/1.1656822 ↗
21. 10.1016/0031-9163(66)90333-710.1016/0031-9163(66)90333-7 ↗
22. 10.1002/pssb.222045023410.1002/pssb.2220450234 ↗
23. 10.1039/c2ce06420k10.1039/c2ce06420k ↗
24. 10.1021/acs.jpcc.6b0474110.1021/acs.jpcc.6b04741 ↗
25. 10.1103/PhysRevLett.96.14660110.1103/PhysRevLett.96.146601 ↗
26. Hummel A. · 1995
27. 10.1103/PhysRevB.22.556510.1103/PhysRevB.22.5565 ↗
28. 10.1016/0146-5724(77)90044-910.1016/0146-5724(77)90044-9 ↗
29. 10.1103/PhysRevLett.82.195510.1103/PhysRevLett.82.1955 ↗
30. 10.1016/S0009-2614(97)01087-710.1016/S0009-2614(97)01087-7 ↗
31. 10.1016/0038-1098(81)91109-110.1016/0038-1098(81)91109-1 ↗
32. 10.1007/BF0101230610.1007/BF01012306 ↗
33. 10.1007/0-387-37766-210.1007/0-387-37766-2 ↗