Carrier Transport in Reduced Graphene Oxide Probed Using Raman Spectroscopy

In the present work, we have investigated the temperature-dependent electronic conduction in hydrazine-reduced graphene oxide in the temperature range of 300–5 K. Raman spectroscopy and transport measurements are used to probe the conduction mechanism. It is observed that the carrier transportation takes place via variable-range hopping. For variable-range hopping, various parameters such as density of states, hopping distance, and hopping energy have been calculated. The conduction behaviors across the temperature range show three different regions with three different characteristic temperatures. Temperature-dependent Raman spectra have been successfully studied for I D / I G ratio, which uncover the length scales of defect sites and number of defects. Further, the line width of the G band is studied to get an insight of electron–phonon interaction. Quantitative analysis of the transport mechanism is done using electron–phonon coupling and I D / I G ratio.