s–d Electronic Interaction Induced H2 Dissociation on the γ-U(100) Surface and Influences of Niobium Doping
Source abstract
Abstract
The dissociation of hydrogen molecules on the γ-U(100) surface is systematically studied with the density functional theory method. Through potential energy surface calculations, we find that hydrogen molecules can dissociate without any barriers on the clean γ-U(100) surface. After careful electronic analysis, it is found that charge transfer between the hydrogen s and uranium d electronic states causes the dissociation, which is quite different from the dissociation of hydrogen molecules on other actinide metal surfaces. Considering that doping of 3d transition metal atoms can stabilize the γ phase of U, we also study the influences of Nb doping on the hydrogen dissociation process. We find that the 3d electronic states of Nb also take part in the hybridization with hydrogen s electronic states, which leads to the result that hydrogen molecules also dissociate without any energy barriers on the doped U surface. In addition, the free electronic energy lowers more quickly for a hydrogen molecule approaching the doped U surface.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nuclear Materials and Properties · Rare-earth and actinide compounds · Fusion materials and technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
LCP, Institute of Applied Physics and Computational Mathematics, P.O. Box 8009, Beijing 100088, People’s Republic of China
National Key Laboratory for Surface Physics and Chemistry, Mianyang 621907, China
China Academy of Engineering Physics, Mianyang 621900, China
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