Isolated Silicon Dangling Bonds on a Water-Saturated n⁺-Doped Si(001)-2 × 1 Surface: An XPS and STM Study

Using Si 2p core-level X-ray photoelectron spectroscopy we have measured the upward band bending at the surface of n + - doped water-saturated Si(001)-2 × 1 and inferred the macroscopic negative surface charge density of the surface. These macroscopic results are in excellent accord with the microscopic view provided by dual-bias scanning tunneling microscopy showing that the isolated silicon dangling bonds (∼1.2 × 10 −2 defects per Si atom) bear indeed a negative charge. Noting the structural analogy between isolated dangling bonds on water-saturated Si(001) and H-terminated Si(001), in the final, prospective section of the paper, we raise the question of the possible role that these defects could play in radical chain reactions with π-bonded molecules, in relationship with the hydride/hydroxyl patterns that are resolved in the scanning tunneling images.