Interface Optimization and Electrical Properties of 0.5Ba(Zr_0.2Ti_0.8)O₃–0.5(Ba_0.7Ca_0.3)TiO₃Thin Films Prepared by a Sol–Gel Process

In this work, 0.5Ba(Zr 0.2 Ti 0.8 )O 3 –0.5(Ba 0.7 Ca 0.3 )TiO 3 (0.5BZT–0.5BCT) thin films were synthesized at 500 °C by introducing a seed layer. Low interfacial diffusion and high (100) orientation were simultaneously achieved. Minimal leakage current density, dielectric constant, and loss were obtained owing to low crystallization temperature and low interfacial diffusion. The pyroelectric coefficient remained relatively high because of the high orientation, which resulted in superior pyroelectric figures of merit compared with previously reported films. This study demonstrates that low-temperature crystallization can suppress interfacial diffusion and extend film applications by integrating the films with silicon substrates and that thin films annealed at 500 °C are good candidates for application in uncooled infrared detectors.