Radiation-Induced Reduction of Ceria in Single and Polycrystalline Thin Films
Source abstract
Abstract
The effect of radiation on the oxidation state of Ce in high-quality single and polycrystalline ceria thin films is presented. The films were synthesized by molecular beam epitaxy and irradiated with high energy ionizing radiation of 2 MeV He + ions with varying flux density. The surface chemistry of the irradiated ceria thin films was characterized by in situ X-ray photoelectron spectroscopy (XPS). Upon irradiation, the concentration of Ce 3+ increased by 13 and 19% in single and polycrystalline ceria, respectively. Molecular dynamics simulation of thermal spikes and displacement cascade damage provide details of radiation induced defects at the end of the range of the ions that can contribute to the observed reduction.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Nuclear materials and radiation effects · Electronic and Structural Properties of Oxides · Nuclear Materials and Properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Advanced Materials Processing and Analysis Centre (AMPAC), Mechanical, Materials and Aerospace Engineering (MMAE), NanoScience Technology Center (NSTC), University of Central Florida, Orlando, Florida 32816, United States
Chemical & Materials Sciences Division (CMSD), Pacific Northwest National Laboratory, Richland, Washington 99352, United States
Environmental Molecular Sciences Laboratory (EMSL), Pacific Northwest National Lab, Richland, Washington 99352, United States
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