Ultrasensitive Phototransistor Based on K-Enriched MoO3 Single Nanowires
Source abstract
Abstract
An ultrasensitive phototransistor was fabricated based on K-intercalated MoO 3 single nanowire. Devices with ultrafast photoresponse rate, high responsivity, and broad spectral response range were demonstrated. Detailed analysis of the charge transport in the device revealed the coexistence of both thermal-activation and photoactivation mechanisms. The promising results are expected to promote the potential of this material in nano/micro-scaled photoelectronic applications.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Transition Metal Oxide Nanomaterials · Gas Sensing Nanomaterials and Sensors · Ga2O3 and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Physics, 2 Science Drive 3, National University of Singapore (NUS), 117542 Singapore
School of Materials Science and Engineering, Nanyang Technological University, Blk N4.1, Nanyang Avenue, 639798 Singapore
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