In Situ Assembly of CuxS Quantum-Dots into Thin Film: A Highly Conductive P-Type Transparent Film
Source abstract
Abstract
Copper sulfide (Cu x S) nanocrystals ranging from ∼2 to 4 nm in diameter were in situ assembled on surface-functionalized substrates at room-temperature to realize novel transparent p-type conducting film that combines good optical transparency and high electrical conductivity. The Cu x S film exhibited superior homogeneity, highly compact microstructure and good adhesion to quartz-glass and polyethylene substrates. Results of X-ray photoelectron spectroscopy, high-resolution transmission electron microscopy and electron diffraction revealed that the film consisted of uniform fine Cu 7 S 4 nanocrystals with copper vacancies. Good optical transparency and large bandgap blue-shift were observed in the Cu x S film attributed to the dominant quantum effect. The Cu x S QD film turned out to be a p-type semiconducting film with a large conductivity up to 10 5 S·m −1 at room temperature, which originated from the numerous defects stabilized by grain boundaries. A mechanism of the Cu x S QD film formation has been proposed based on the surface-induced nucleation and the in situ assembly of the Cu x S QDs.
Source: openalex_inverted_index · Quality: baseline
Research context
OpenAlex topics: Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, P. R. China
References (25)
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