Sn whisker growth during thermal cycling

Abstract Pure Sn plating on ceramic chip capacitors was tested by thermal cycling both in air and in vacuum for up to 3000 cycles and the whisker growth mechanism was clarified. A thin crystalline SnO layer is formed on the surface of Sn plating and whiskers, which exhibits a high level of cracking. Thermal cycling whiskers exhibit two distinct features: fine striation rings on the whisker side face vertical to the whisker growth axis; and deep grooves at the root of the whiskers. One ring of the fine striations corresponds to each thermal cycle. The formation of the grooves can be attributed to thermal cycle cracking along grain boundaries of Sn followed by oxidation and growth of whiskers from the root grains. The characteristic winding feature observed for thermal cycling whiskers can be attributed to the formation of root grooves with severe oxidation. Whisker growth in vacuum is faster than in air. Whiskers grown in vacuum are thinner and longer than whiskers grown in air, while the whisker density is not influenced by atmosphere. The interval of striation rings is wider for vacuum-grown whiskers as compared with air-grown whiskers.