Growth of dislocation clusters during directional solidification of multicrystalline silicon ingots
Source abstract
Abstract
Abstract Highly detrimental dislocation clusters are frequently observed in lab-scale as well as industrially produced multicrystalline silicon ingots for solar cell applications. This paper presents an investigation of dislocation clusters and how they develop over the whole height of a pilot-scale ingot. A 12-kg ingot, cast in a pilot-scale directional solidification furnace using a standard slip cast silica crucible and standard coating containing silicon nitride powder, was studied with respect to dislocation clusters. Dislocation clusters originating from grain boundaries were identified and followed from an early stage to the top of the ingot. One possible model for growth and multiplication of the dislocations in the clusters during solidification where slip on the { 1 1 ¯ 0 } 〈1 1 0〉 system must be allowed is described in detail. Another possible mechanism is also discussed.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (28)
Show source-provided references
1. Influence of extended defects and native impurities on the electrical properties of directionally solidified polycrystalline silicon10.1149/1.2095543 ↗
2. Response to phosphorus gettering of different regions of cast multicrystalline silicon ingots10.1016/S0038-1101(98)00283-4 ↗
3. Efficiency limitations of multicrystalline silicon solar cells due to defect clusters10.1557/PROC-864-E6.2 ↗
4. Ryningen B, Sultana KS, Stubhaug E, Lohne O, Hjemås PC. Dislocation clusters in multicrystalline silicon. In: 22nd European photovoltaic solar energy conference, WIP-Munich, Milan, Italy; 2007.
5. Multicrystalline siliconfor solar cells10.1016/j.tsf.2005.01.061 ↗
6. Reimann C, Trempa M, Meissner E, Friedrich J. Systematic investigation on dislocation formation during directional solidification of multi-crystalline silicon. In: 4th International workshop on science and technology of crystalline silicon solar cells, Taipei, Taiwan; 2010.
7. The relationship between microstructure and dislocation density distribution in multicrystalline silicon10.1063/1.3488643 ↗
8. Odland I, Stokkan G. Mechanisms for formation of dislocations near the bottom of a multicrystalline silicon ingot. In: 4th International workshop on science and technology of crystalline silicon solar cells, Taipei, Taiwan; 2010.
9. Alexander · 1968
10. Silicon ingot casting: process development by numerical simulations10.1016/S0927-0248(01)00153-2 ↗
11. M’Hamdi M, Olsen E. Analysis of dislocation multiplication during multicrystalline silicon ingot casting. In: 21stEuropean photovoltaic solar energy conference, WIP-Munich, Dresden, Germany; 2006.
12. Numerical analysis of cooling rate dependence on dislocation density in multicrystalline silicon for solar cells10.1016/j.jcrysgro.2010.11.009 ↗
13. Generation mechanism of dislocations during directional solidification of multicrystalline silicon using artificially designed seed10.1016/j.jcrysgro.2010.01.011 ↗
14. Ryningen B. Formation and growth of crystal defects in directionally solidified multicrystalline silicon fro solar cells. Doctoral thesis, NTNU, Trondheim; 2008. p. 103.
15. Olsen E, Nordmark H, Øvrelid E. Studies of selected silicon feedstock impurities on properties of multicrystalline silicon ingots. In: 20th European photovoltaic solar energy conference, WIP-Munich, Paris, France; 2004.
16. A new defect etch for polycrystalline silicon10.1149/1.2115670 ↗
17. Thermo-mechanical analysis of directional crystallisation of multi-crystalline silicon ingots10.4028/www.scientific.net/MSF.508.597 ↗
18. Ervik T, Kivambe M, Stokkan G, Ryningen B, Lohne O. Dislocation formation at Σ=27a boundaries in multicrystalline silicon for solar cells. In: 26th European photovoltaic solar energy conference, WIP-Munich, Hamburg, Germany; 2011.
19. Ryningen B, Stokkan G, Lohne O. Growth of dislocation clusters in directionally solidified multicrystalline silicon. In: 23rd European photovoltaic solar energy conference, WIP-Munich, Valencia, Spain; 2008.
20. Hull · 2001
21. Hirth · 1982
22. A dislocation multiplication mechanism operating close to a surface10.1080/14786437208228890 ↗
23. Three-dimensional X-ray topographic studies of internal dislocation sources in silicon10.1063/1.1713778 ↗
24. High temperature plane strain compression of cube oriented aluminium crystals10.1016/0956-7151(93)90185-U ↗
25. Dislocations in the diamond lattice10.1016/0022-3697(58)90138-0 ↗
26. Plastic deformation of germanium and silicon by torsion
27. Direct observations of the geometry of defects in germanium10.1080/14786436308209082 ↗
28. In situ observations of crystal growth behavior of silicon melt10.1016/S0022-0248(02)01521-X ↗