Effect of Ti interlayer on interfacial thermal conductance between Cu and diamond
Source abstract
Abstract
Abstract Cu/Ti bilayers were magnetron sputtered onto a diamond substrate to simulate interfaces in diamond particles reinforced Cu matrix (Cu/diamond) composites. The Cu/Ti/diamond system was tuned to Cu/Ti/TiC/diamond and Cu/TiC/diamond structures by annealing the Ti interlayer at 1073 K. The interfacial thermal conductance (G) between Cu and diamond was experimentally measured by a time-domain thermoreflectance (TDTR) technique to investigate the dependence of the G on the Cu/interlayer/diamond structure. The Cu/TiC/diamond structure exhibits higher G of 76 MW m−2 K−1 than the Cu/Ti/TiC/diamond of 60 MW m−2 K−1, the Cu/Ti/diamond of 30 MW m−2 K−1, the as-deposited Cu/diamond of 66 MW m−2 K−1, and the annealed Cu/diamond of
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thermal properties of materials · Numerical methods in engineering · Advanced ceramic materials synthesis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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