Unified analytic representation of physical sputtering yield

Abstract Generalized energy parameter η=η(e,δ) and normalized sputtering yield Y (η) , where e=E/ETF and δ=Eth/ETF, are introduced to achieve a unified representation of all available experimental and sputtering data at normal ion incidence. The sputtering data in the new Y (η) representation retain their original uncertainties. The Y (η) data can be fitted to a simple three-parameter analytic expression with an rms deviation of 32%, well within the uncertainties of original data. Both η and Y (η) have correct physical behavior in the threshold and high-energy regions. The available theoretical data produced by the TRIM.SP code can also be represented by the same single analytic function Y (η) with a similar accuracy.