journal article·1990-12

Trapping of D in SiC and damage due to implantation

R. Siegele, S.P. Withrow, J. Roth, B.M.U. Scherzer

Publisher page

Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

Source: Not provided · Quality: missing

Research context

OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Ion-surface interactions and analysis

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (16)

Show source-provided references
1. Erents · 1976 · 318
2. Nagata · J. Nucl. Mater. · 1984 · 128 & 129 · 76010.1016/0022-3115(84)90453-7 ↗
3. Wright · J. Nucl. Mater. · 1976 · 63 · 41510.1016/0022-3115(76)90358-5 ↗
4. Spitznagel · Nucl. Instr. and Meth. · 1986 · B 16 · 23710.1016/0168-583X(86)90019-4 ↗
5. Edmonds · 1986 · 51 · 395
6. Edmonds · J. Mater. Res. · 1988 · 3 · 32110.1557/JMR.1988.0321 ↗
7. Williams · Nucl. Instr. and Meth. · 1983 · 209/210 · 31710.1016/0167-5087(83)90818-9 ↗
8. Bohn · J. Mater. Res. · 1987 · 2 · 10710.1557/JMR.1987.0107 ↗
9. Liaw · J. Electrochem. Soc. · 1985 · 132 · 64210.1149/1.2113921 ↗
10. Behrisch · Vak. Technik · 1967 · 10 · 250
11. Rimini · 1978 · 455
12. Nielsen · Phys Rev · 1988 · B 37 · 2066
13. Möller · Comp. Phys. Commun. · 1988 · 35510.1016/0010-4655(88)90148-8 ↗
14. Wood · 1983 · 247
15. Doyle · J. Nucl. Mater. · 1981 · 103 & 104 · 51310.1016/0022-3115(82)90650-X ↗
16. Scherzer · J. Nucl. Mater. · 1976 · 63 · 10010.1016/0022-3115(76)90309-3 ↗