journal article·1984-12

Retention of hydrogen implanted into SiC single crystals

S. Nagata, S. Yamaguchi, Y. Fujino, M. Hirabayashi, K. Kamada

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Ion-surface interactions and analysis · Semiconductor materials and devices · Silicon Carbide Semiconductor Technologies

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References (9)

Show source-provided references
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4. Biersack · Nucl. Instrum. Meth. · 1980 · 174 · 25710.1016/0029-554X(80)90440-1 ↗
5. Doyle · Rad. Eff. Lett. · 1980 · 57 · 8110.1080/01422448008226505 ↗
6. Doyle · IEEE Trans. Nucl. Sci. NS-28 · 1981 · 130
7. Doyle · J. Nucl. Mater. · 1979 · 85/86 · 101910.1016/0022-3115(79)90395-7 ↗
8. 1962 · 3519
9. Partinton · 1961