Point defect 3- Edge dislocation rate constants and bias factors using lattice relaxation and monte carlo simulations
Bibliographic record
Abstract
No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.
Source: Not provided · Quality: missing
Research context
OpenAlex topics: Silicon and Solar Cell Technologies · Electron and X-Ray Spectroscopy Techniques · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
References (12)
Show source-provided references
1. 1977
2. Dislocation Dynamics
3. Ingle · Acta Met · 1978 · 26 · 146110.1016/0001-6160(78)90161-X ↗
4. de Hosson · thesis · 1976
5. van Heugten · Phys. Stat. Sol. (b) · 1978 · 90 · 64310.1002/pssb.2220900224 ↗
6. Hirth · 1968
7. Featherston · Phys. Rev. · 1963 · 130 · 132410.1103/PhysRev.130.1324 ↗
8. Johnson · 1972 · 301
9. Bullough · Rep. Prog. Phys. · 1970 · 33 · 10110.1088/0034-4885/33/1/303 ↗
10. R. H. J. Fastenau and P. Penning, to be published in Phys. Stat. Solidi (a).
11. R. H. J. Fastenau and M. I. Baskes, to be published.
12. Baskes · Phys. Rev. · 1978 · B 17 · 42210.1103/PhysRevB.17.422 ↗