Ion fluence dependence on chemical behavior of energetic deuterium implanted into oxygen-contained boron film

Abstract Ion fluence dependence on chemical behavior of energetic deuterium implanted into oxygen-contained boron and pure boron films was investigated by XPS and TDS. It was found that large amount of D implanted into the oxygen-contained sample was quickly desorbed as D2O by chemical sputtering during D 2 + implantation. The D retention for both samples increased as the D 2 + fluence increased. The implanted D was preferentially trapped by O with forming O–D bond, and thereafter by B with forming B–D bond. These facts indicate that the stability of D bound to O is higher than that bound to B. It was concluded that the chemical sputtering of oxygen by energetic particles and the chemical stability of O–D bond should be taken into consideration for the evaluation of tritium inventory in the oxygen-contained boron film.