The effect of recrystallization on the resistivity recovery of W
Source abstract
Abstract
The influence of recrystallization on the recovery of radiation damage in tungsten (W) was investigated. Polycrystalline cold-rolled W foils were annealed in the temperature range between 1100 and 1600 °C and recrystallization and grain growth was observed. Subsequently, the specimens were irradiated with 7 MeV protons at cryogenic temperature. The induced radiation damage and its recovery during isochronal annealing treatments was monitored by in-situ measurements of the electrical resistivity. We observe that the recrystallized samples exhibit (a) a significant reduction in total defect recovery and (b) changes in characteristic features of the recovery spectra with respect to the as-received ones. These results are discussed and correlated to the effect of grain boundaries and dislocations on the radiation defect reactions. © 2021 Elsevier B.V.
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Research context
OpenAlex topics: Fusion materials and technologies · Ion-surface interactions and analysis · Nuclear Materials and Properties
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