In-pile tensile creep of chemical vapor deposited silicon carbide at 300 °C
Source abstract
Abstract
Abstract Irradiation-induced creep is one of the key material properties considered in designing structural components for nuclear reactors. This paper presents results for in situ irradiation-induced creep of chemical vapor–deposited 3C silicon carbide studied by instrumented irradiation in the Halden reactor in Norway. The specimens examined were irradiated at 300 °C and up to 2.5 × 1024 n/m2 (E > 0.1 MeV) under uniaxial tensile stress of
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Nuclear Materials and Properties · Advanced ceramic materials synthesis · Fusion materials and technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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