The electrical behavior of Cu thin film induced by carbon ion irradiation
Source abstract
Abstract
Abstract This study systematically investigates the influence of carbon ion irradiation on the electrical resistivity of single layer Cu films. Carbon ion irradiations with the energy of 3 MeV and the fluences of 5 × 10 13 ions/cm2 and 5 × 10 14 ions/cm2 were performed on the Cu films. The change of the resistivity and the temperature coefficient of resistivity before and after irradiation largely depends on the grain boundary. The amended model was proposed to describe the resistivity of ion-irradiated Cu films by considering the surface scattering, grain boundary scattering and the defects induced by ion irradiation.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Copper Interconnects and Reliability · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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