journal article·1994-09

The threshold energy for defect production in SiC: a molecular dynamics study

J. Wong, T.Diaz de la Rubia, M.W. Guinan, M. Tobin, J.M. Perlado, A.S. Perez, J. Sanz

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Abstract

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OpenAlex topics: Silicon Carbide Semiconductor Technologies · Semiconductor materials and devices · Ion-surface interactions and analysis

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References (22)

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