journal article·2020-01

TEM characterisation of helium platelets in implanted uranium dioxide

Adrien V. Michel, Gaëlle Carlot, Claire Onofri, Catherine Sabathier, Martiane Cabié, Myriam Dumont

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Abstract

Abstract Polycrystalline UO2 discs were implanted with 500 keV helium ions at different temperatures (200, 400 and 600 °C) and fluences (1 and 3 × 1016 at cm−2), and further characterised by transmission electron microscopy (TEM). Examinations performed on the more concentrated sample implanted at 600 °C allowed us to observe platelets for the first time in the UO2 material in planes parallel to { 1 1 1 } U O 2 . A complete study was undertaken in grains oriented along , and directions to determine {1 1 1} variant equivalence on platelet formation. Their features like density and size have been characterised with an appropriate statistic.
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Research context

OpenAlex topics: Nuclear Materials and Properties · Nuclear reactor physics and engineering · Fusion materials and technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

References (42)

Show source-provided references
1. Effect of helium on the microstructure of spent fuel in a repository: an operational approach10.1016/j.jnucmat.2010.09.034 ↗
2. Thermal diffusion of helium in 238Pu-doped UO210.1016/j.jnucmat.2013.10.066 ↗
3. A transmission electron microscopy quantitative study of the growth kinetics of H platelets in Si10.1063/1.125606 ↗
4. Kinetic aspects of the growth of platelets and voids in H implanted Si10.1016/S0168-583X(00)00503-6 ↗
5. Nucleation and growth of platelets in hydrogen-ion-implanted silicon10.1063/1.1900309 ↗
6. Comparison of platelet formation in hydrogen and helium-implanted silicon10.1016/j.nimb.2007.04.158 ↗
7. Effect of H and He irradiation on cavity formation and blistering in ceramics10.1016/j.nimb.2012.03.030 ↗
8. Wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy: wafering of ultra-thin silicon substrates by MeV hydrogen implantation: effects of fluence and energy10.1002/pssc.201600054 ↗
9. Silicon exfoliation by hydrogen implantation: actual nature of precursor defects10.1016/j.nimb.2017.04.033 ↗
10. Formation of helium plateles in molybdenum10.1038/291310a0 ↗
11. Room temperature precipitation of helium in molybdenum observed by tem and THDS; Helium platelet formation10.1016/0022-3115(82)90761-9 ↗
12. 3He bubble formation in titanium tritides at elevated temperatures A TEM study10.1080/01418619208201507 ↗
13. Planar helium bubble arrays in nickel10.1016/0022-3115(86)90250-3 ↗
14. The effects of the annealing temperature on the formation of helium-filled structures in silicon10.1016/S0168-583X(98)00714-9 ↗
15. He-induced cavity formation in silicon upon high-temperature implantation10.1016/S0168-583X(99)00888-5 ↗
16. Bubbles in SiC crystals formed by helium ion irradiation at high temperatures10.1016/0022-3115(88)90042-6 ↗
17. Evolution of helium platelets and associated dislocation loops in α-SiC10.1103/PhysRevLett.82.2709 ↗
18. Microstructural evolution of helium-implanted α-SiC10.1103/PhysRevB.61.12923 ↗
19. Dose dependence of formation of nanoscale cavities in helium-implanted 4H–SiC10.1063/1.1611630 ↗
20. Structural disordering and extended defects produced by He-implantation in silicon carbide10.1088/0022-3727/46/48/485105 ↗
21. Transmission electron microscopy investigations of bubble formation in He-implanted polycrystalline SiC10.1016/j.vacuum.2014.12.017 ↗
22. In situ observation of microstructure evolution in 4H–SiC under 3.5 keV He + irradiation10.1016/j.jnucmat.2016.01.017 ↗
23. Microstructure of helium-implanted α-Al2O3 after annealing10.1016/j.actamat.2005.11.030 ↗
24. Behaviour of implanted helium in boron carbide in the temperature range 750 to 1720°C10.1080/00337578708210059 ↗
25. Helium behaviour in implanted boron carbide10.1051/epjn/e2015-50007-5 ↗
26. Quantitative pressure and strain field analysis of helium precipitates in silicon10.1007/s10853-006-0153-1 ↗
27. Accurate lattice parameter measurements of stoichiometric uranium dioxide10.1016/j.jnucmat.2015.01.029 ↗
28. Ziegler · 2008
29. High voltage electron microscope observations of UO210.1016/0022-3115(85)90077-7 ↗
30. Electron energy loss spectroscopy investigation through a nano ablated uranium dioxide sample10.1016/j.talanta.2013.01.023 ↗
31. Hirsch · 1965
32. Williams · 1996
33. Defocusing contrast of cavities
34. Electron energy loss spectroscopy investigations through nano-ablated actinide dioxide samples10.1016/j.pnucene.2013.11.016 ↗
35. Kuhn · 1962
36. Mompiou · Stereoproj · 2018
37. Fiji: an open-source platform for biological-image analysis10.1038/nmeth.2019 ↗
38. Quantitative determination of the pressure of He in bubbles in Al and Ni10.1016/0038-1098(82)90128-4 ↗
39. The density of helium bubbles in implanted materials – results from VUV absorption and EEL spectroscopy10.1080/00337578308207382 ↗
40. Study by EELS of helium bubbles in a martensitic steel10.1016/j.jnucmat.2009.05.011 ↗
41. Darras · 2015
42. Determination of the free Gibbs energy of plate-like precipitates of hydrogen molecules and silicon vacancies formed after H+ ion implantation into silicon and annealing10.4028/www.scientific.net/SSP.242.190 ↗