journal article·2003-03

Modeling of ELM events and their effect on impurity enrichment

J. Hogan, R. Colchin, D. Coster, L. Baylor, M. Fenstermacher, M. Groth, M. Wade

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Abstract

Modeling of transient impurity transport during large ELMs is used to explore basic processes which may determine ELM-averaged enrichment. The b2-Eirene code (solps4), used for DIII-D geometry, suggests that a complex sequence can occur during an ELM cycle in which a transiently detached phase, with relatively low enrichment, can occur even under nominally attached conditions. A slower recovery phase then follows, in which the effect of induced scrape-off layer flows can increase in importance. The model results are compared with available fast time-scale measurements. The observed increased enrichment with higher Z is similar to trends in basic particle reflection properties. Neon recycling processes may thus introduce a significant history effect, as illustrated by analysis of continuous, unforced neon accumulation in a DIII-D discharge with a well-characterized operational history.
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Research context

OpenAlex topics: Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design · Plasma Diagnostics and Applications

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