Effect of solute Nb and Sn on self-interstitial atom defect in zirconium-based alloys by first-principles calculations

Zirconium based alloys are viewed as one of the most important fuel cladding materials, and alloy elements play a crucial role in improving its irradiation resistance, especially Nb and Sn. In present work, self-interstitial atom formation energy, binding energy between dopant Nb/Sn and the self-interstitial atom, and electronic structure are systematically investigated with the density functional theory. The diffusion barriers of the self-interstitial atom under the effect of Nb/Sn are calculated with the climbing image nudged elastic band (CI-NEB) method. Depending on the calculation results, the most stable configuration is BT and BS after doping Nb and Sn atom, respectively, different from BO for the Zr crystal without dopant. In the doped structure, the orbital hybridization of Nb atom and self-interstitial atom was obvious, while the orbital overlap of Sn atom with matrix atom and self-interstitial atom was less. Orbital hybridization of Nb atom and zirconium atoms mainly occurs between d orbits. After doping Nb, the diffusion barrier of the interstitial atoms increases, inhibits their diffusion or cluster growth. And the dopant Sn makes the formation of interstitial atom more difficult depending on the larger formation energy. The calculation results may explain the mechanism of improving its irradiation resistance by Nb and Sn doping.