Blistering and trapping characteristics of aluminum during Ar ion implantation and post-irradiation annealing
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OpenAlex topics: Silicon and Solar Cell Technologies · Integrated Circuits and Semiconductor Failure Analysis · Semiconductor materials and interfaces
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References (11)
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5. Ion Bombardment Modification of Surfaces
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8. N. Matsunami, Y. Yamamura, Y. Itikawa, N. Itoh, Y. Kazumata, S. Miyagawa, K. Morita and R. Shimizu, Energy Dependence of Sputtering Yield of Monoatomic Solids, Institute of Plasma Physics, Nagoya University, Report IPPJ AM-14.
9. Eernisse · J. Appl. Phys. · 1977 · 4810.1063/1.323332 ↗
10. 1974 · Vol. 2
11. N.T. My, F. Pászti, G. Mezey, A. Manuaba, E. Kótai and J. Gyulai, to be published.