Infrared spectroscopy of ion tracks in amorphous SiO2 and comparison to gamma irradiation induced changes
Source abstract
Abstract
Ion track formation in amorphous SiO2 was investigated using infrared spectroscopy. For comparison, one set of samples was also irradiated using 1.25 MeV gamma rays. An increase of 1044 cm−1 peak and decrease of 1078 cm−1 peak was observed in all cases. Experimental results were analysed using an analytical thermal spike model and non-standard model parameters were found. This finding is attributed to the amorphous structure of the material.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Ion-surface interactions and analysis · Diamond and Carbon-based Materials Research · Nuclear materials and radiation effects
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References (100+)
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