Light ion irradiation creep of Textron SCS-6™ silicon carbide fibers

Abstract Creep tests were conducted in torsion on Textron SCS-6™ fibers during an irradiation with light ions in the temperature range 500–1000 °C for doses up to 0.16 dpa. The fibers produced by chemical vapor deposition have a similar structure as a silicon carbide composite matrix produced by chemical vapor infiltration. At 600 °C, the irradiation creep curves were characterized by a continuous drop in creep rate with dose. There was approximately a square root relationship between irradiation creep strain and dose. The creep rate was a linear function of stress. On a decrease in temperature the creep rate increased. At 1000 °C, the creep rate dropped only slightly with dose and decreased if the temperature was lowered. The results are discussed in terms of concentration and mobility of point defects and the change of these quantities with temperature.