R&D of joining technology for SiC components with channel

Abstract The new joining method of SiC components with channel was developed in this study by using hot-press. The SiC ceramics was joined by using mixed Al 2 O 3 , Y 2 O 3 , SiO 2 and SiC powders. Joining was carried out at from 1500 °C to 1900 °C for 1 h, under an applied pressure, range from 5 MPa to 20 MPa. Microstructural characterization was carried out for the joined materials by optical and scanning electron microscopy. The mechanical property of the joint was evaluated through a tensile test. The joint strength was increased with increasing joining temperature and pressure. In joining of complex shape SiC components, the serious deformation of substrate occurred because of high joining temperature and pressure. The low joining condition, In case of 1800 °C and 20 MPa, deformation of substrate not occurred. It is possible that the deformation of substrate was controlled by joining temperature. The joint layer of SiC component by using new joining method was cleaned and uniformed.