Darkening of amorphous SixGe1-x thin films by means of non-affine thermal strain
Source abstract
Abstract
Abstract We provide first observation of the effect of spatially uniform temperature change, causing non-affine thermal strain, on the optical properties of amorphous SixGe1-x (x = 0.85, 0.60 and 0.15) thin films. The thermal strain was introduced by 7 cycles of cooling from room temperature to 77 K. It led to a decrease of the transmission, increase of absorption and red shift in the absorption edge (darkening). This effect of cycling is similar to the effect of increasing the Ge content. Analysis of the XPS spectra has shown that a certain fraction of homopolar Ge-Ge bonds were broken and Si-Ge heteropolar bonds were formed with cooling cycles. These changes, as creation of extra defects in the amorphous structure, can cause darkening, similarly to photo-darkening induced by laser irradiation. The darkening via thermal strain is a suitable technique to tune the optical and structural properties of thin films for different applications.
Source: openaire · Quality: candidate unverified · Source record ↗
Research context
OpenAlex topics: Thin-Film Transistor Technologies · Phase-change materials and chalcogenides · Silicon Nanostructures and Photoluminescence
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
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