journal article·1998-05

Simulation of deep defect filling in n-type Schottky barrier structures

R Brüggemann, H Cordes, K Lips

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Abstract

No abstract is available for this record. The assistant can identify its topic from the title, but cannot infer the study’s results.

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Research context

OpenAlex topics: Semiconductor materials and interfaces · Thin-Film Transistor Technologies · Silicon and Solar Cell Technologies

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References (6)

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1. Cohen · Phys. Rev. Lett. · 1992 · 69 · 335810.1103/PhysRevLett.69.3358 ↗
2. Jackson · Phys. Rev. B · 1995 · 52 · R223310.1103/PhysRevB.52.R2233 ↗
3. Lips · J. Non-Cryst. Solids · 1996 · 198–200 · 646
4. Brüggemann · Mater. Res. Soc. Symp. Proc. · 1992 · 258 · 72910.1557/PROC-258-729 ↗
5. Cohen · Mater. Res. Soc. Symp. Proc. · 1996 · 420 · 67910.1557/PROC-420-679 ↗
6. Kwon · J. Non-Cryst. Solids · 1996 · 198–200 · 53010.1016/0022-3093(95)00753-9 ↗