journal article·1998-05

Photoluminescence at 1.54 μm of Er-doped hydrogenated amorphous silicon

Mikhail Bresler, Oleg Gusev, Alexey Kuznetsov, Vera Kudoyarova, Evgenii Terukov, Irina Yassievich, Walther Fuhs, Isabell Ulber, Gerhard Weiser

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Abstract

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Research context

OpenAlex topics: Thin-Film Transistor Technologies · Silicon Nanostructures and Photoluminescence · Glass properties and applications

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References (6)

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1. G.S. Pomrenke, P.B. Klein, D.W. Langer (Eds.), Rare earth doped semiconductors, Mater. Res. Soc. Symp. Proc., Vol. 301, 1993.10.1557/PROC-301-3 ↗
2. S. Coffa, A. Polman, R.N. Schwartz (Eds.), Rare Earth Doped Semiconductors II, Mater. Res. Soc. Symp. Proc., Vol. 422, 1996.
3. Oesterreich · Appl. Phys. Lett. · 1990 · 56 · 44610.1063/1.102760 ↗
4. Bresler · Appl. Phys. Lett. · 1995 · 67 · 359910.1063/1.115330 ↗
5. Marakhonov · J. Non-Cryst. Sol. · 1991 · 137–138 · 81710.1016/S0022-3093(05)80245-5 ↗
6. I.N. Yassievich, M.S. Bresler, O.B. Gusev, J. Phys. C, (accepted for publication).