Temperature dependence of photoluminescence intensity and decay in GeSe2 glass

Abstract The intensity and decay profile of the photoluminescence (PL) in glassy GeSe2 are measured as a function of temperature from 2 to 200 K. The intensity decreases exponentially in the temperature region >100 K. The complicated temperature dependence of the decay profile as well as the dependence of the intensity are explained in a unified framework by adopting a model of the luminescent sites whose thermal activation energy for the non-radiative process is distributed. We show that the intensity variation is affected by the non-radiative process while the decay life time depends almost only on the radiative transition rate.